H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation period
2. M. Suemitsu, K.-J. Kim, H. Nakazawa and N. Miyamoto, Appl. Surf. Sci., to be published.
3. Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane
4. Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?
5. Effects of mixing germane in silane gas‐source molecular beam epitaxy
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