Author:
Da̧browski J.,Northrup John E.
Publisher
American Physical Society (APS)
Cited by
22 articles.
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1. Resolving the mystery of the concentration-dependence of amphoteric dopant diffusion in III-V semiconductors;ACTA MATER;2020
2. Resolving the mystery of the concentration-dependence of amphoteric dopant diffusion in III-V semiconductors;Acta Materialia;2020-03
3. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
4. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
5. Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03