Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351120
Reference37 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
4. Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
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