Growth kinetics ofCaF2/Si(111) heteroepitaxy: An x-ray photoelectron diffraction study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.5352/fulltext
Reference43 articles.
1. Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates
2. Surface evolution during molecular-beam epitaxy deposition of GaAs
3. Variable growth modes of CaF2on Si(111) determined by x‐ray photoelectron diffraction
4. CaF2-Si(111) as a model ionic-covalent system: Transition from chemisorption to epitaxy
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