Variable growth modes of CaF2on Si(111) determined by x‐ray photoelectron diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109478
Reference13 articles.
1. Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review
2. Growth and characterization of single crystal insulators on silicon
3. Electronic structure of theCaF2/Si(111) interface
4. Photoemission study of bonding at theCaF2-on-Si(111) interface
5. Structure of the Si(111)-CaF2Interface
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2. Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklikeCaF2∕Si(111)films;Physical Review B;2005-11-28
3. Temperature-dependent growth mechanisms of CaF2 on Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-09
4. Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy;Physical Review B;2004-01-12
5. Initial Stage of CaF2/Si(111) Epitaxy Investigated by Lateral/Atomic Force Microscopy;Surface Review and Letters;2003-08
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