Initial Stage of CaF2/Si(111) Epitaxy Investigated by Lateral/Atomic Force Microscopy
Author:
Affiliation:
1. Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0218625X03005487
Reference23 articles.
1. Heteroepitaxy of Disparate Materials: From Chemisorption to Epitaxy in CaF2/Si(111)
2. Epitaxial relations and electrical properties of low‐temperature‐grown CaF2 on Si(111)
3. CdF2–CaF2 superlattices on Si(111): MBE growth, structural and luminescence studies
4. Photoemission study of bonding at theCaF2-on-Si(111) interface
5. Electronic structure of theCaF2/Si(111) interface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15
2. Vapor Epitaxy of Fluorides on Semiconductors;Reference Module in Materials Science and Materials Engineering;2016
3. Temperature-dependent growth mechanisms of CaF2 on Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-09
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