CaF2-Si(111) as a model ionic-covalent system: Transition from chemisorption to epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5716/fulltext
Reference19 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Effect of strain on surface morphology in highly strained InGaAs films
3. Structure of the Si(111)-CaF2Interface
4. Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface
5. Scanning tunneling microscopy of insulators: CaF2epitaxy on Si (111)
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1. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15
2. High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell;Applied Physics Letters;2012-10-08
3. Morphology and texture evolution of nanostructured CaF2films on amorphous substrates under oblique incidence flux;Nanotechnology;2010-10-05
4. Formation of nanoscale clusters during the initial stages of CaF2 growth on miscut Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-09
5. Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111);Physical Review B;2010-08-31
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