Layer perfection in ultrathin InAs quantum wells in GaAs(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2073/fulltext
Reference43 articles.
1. X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface
2. Accommodation of strain in ultrathin InAs/GaAs films
3. The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures
4. Strain and relaxation in InAs and InGaAs films grown on GaAs(001)
5. An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown by atomic layer epitaxy
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2. Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs∕Ge∕SixGe1−x∕Si substrate;Journal of Applied Physics;2006-09-15
3. Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well;Journal of Applied Physics;2006-03-15
4. The effects of both surface segregation of In atoms and strain on the confinement profile of InGaAs/GaAs multi quantum wells;Materials Science and Engineering: C;2006-03
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