X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.11496/fulltext
Reference20 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
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5. Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs
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