Spatial distribution of Ar on the Ar-ion-induced rippled surface of Si
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.235308/fulltext
Reference18 articles.
1. Nanostructuring surfaces by ion sputtering
2. Spontaneous Pattern Formation on Ion Bombarded Si(001)
3. Patterning a surface on the nanometric scale by ion sputtering
4. Theory of ripple topography induced by ion bombardment
5. Atomic force microscopy study of60−keVAr-ion-induced ripple patterns on Si(100)
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1. Surface patterning of argon ion sputtered low density polyethylene;Materials Letters;2022-02
2. Presence of reactive impurities in Ar+ ion beam plays a key role for Si ripple formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04
3. Argon ion beam induced surface pattern formation on Si;Journal of Applied Physics;2016-01-21
4. Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences;Applied Surface Science;2015-08
5. Medium energy Ar+-ion induced ripple formation: Role of ion energy in pattern formation;Applied Surface Science;2014-10
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