Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35-Reference-Cited by-同舟云学术

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Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35

Published:1991-06-15 Issue:18 Volume:43 Page:14540-14556
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Glaser E. R.,Kennedy T. A.,Molnar B.,Sillmon R. S.,Spencer M. G.,Mizuta M.,Kuech T. F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14540/fulltext

Reference46 articles.

1. Deep donor levels (DXcenters) in III‐V semiconductors

2. Electron-paramagnetic-resonance study of the SnDXcenter in direct-gapGa0.69Al0.31As

3. Electron-paramagnetic-resonance measurements of Si-donor-related levels inAlxGa1−xAs

4. Two Electron D-State of DX-Centers

5. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

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1. The energy state of an impurity donor in a type II quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2015-11

2. Binding energy and radiative lifetime of an exciton in a type-II quantum well;Physica Scripta;2011-12-08

3. Elastic spin-relaxation processes in semiconductor quantum dots;Physical Review B;2007-05-30

4. Correlation of phonon decay with localized electron spin-phase diffusion;Physical Review B;2004-08-10

5. Spin splitting of X-valley-related donor impurity states in an AlAs barrier;Journal of Experimental and Theoretical Physics Letters;2004-07

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