Influence ofδdoping position on subband properties inIn0.2Ga0.8As/GaAsheterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.205312/fulltext
Reference28 articles.
1. Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers
2. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
3. High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them
4. Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
5. High electron mobility AlGaN/GaN heterostructure on (111) Si
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On intersubband absorption of radiation in delta-doped QWs;Physica E: Low-dimensional Systems and Nanostructures;2015-11
2. Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures;Semiconductors;2015-02
3. On the possibility of tuning the energy separation between space-quantized levels in a quantum well;Philosophical Magazine Letters;2013-01
4. Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells;Journal of Applied Physics;2012-07-15
5. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures;Semiconductors;2011-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3