Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737777
Reference19 articles.
1. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
2. Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties
3. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
4. Band parameters for III–V compound semiconductors and their alloys
5. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03
2. Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit;Physica E: Low-dimensional Systems and Nanostructures;2021-09
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