Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.2469/fulltext
Reference45 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
4. Carbon diffusion in undoped,n‐type, andp‐type GaAs
5. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
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2. Local vibrational mode study of carbon-dopedInAs;Physical Review B;2006-09-21
3. Hydrogen-impurity complexes in III–V semiconductors;Reports on Progress in Physics;2004-11-03
4. Deep hydrogen traps in heavily B-doped diamond;Physical Review B;2003-12-23
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