Spectroscopy of excited states inIn0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy
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Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.9023/fulltext
Reference29 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μm
3. Optical properties of GaInAs/AlInAs single quantum wells
4. Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells
5. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
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