Diffuse x-ray scattering from stacking faults ina-plane GaN epitaxial layers-Reference-Cited by-同舟云学术

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Diffuse x-ray scattering from stacking faults ina-plane GaN epitaxial layers

Published:2011-09-23 Issue:9 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Barchuk M.,Holý V.,Kriegner D.,Stangl J.,Schwaiger S.,Scholz F.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.094113/fulltext

Reference19 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. X-ray diffraction of III-nitrides

3. An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN

4. X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray characterisation of the basal stacking fault densities of (112̄2) GaN;CrystEngComm;2021

2. Retrieving the configuration of grain boundary structure in polycrystalline materials by extraordinary X-ray reflection analysis;Journal of Applied Crystallography;2020-07-16

3. High-Resolution X-Ray Diffraction Analysis of Epitaxial Films;ACTA METALL SIN;2020

4. Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM;Journal of Applied Physics;2019-03-14

5. X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers;Journal of Crystal Growth;2019-02

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