Charge transfer and asymmetry on Ge(111)-c(2×8) studied by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.1403/fulltext
Reference11 articles.
1. Surface structure and long-range order of the Ge(111)-c(2×8) reconstruction
2. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
3. Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries
4. Structure determination of theGe(111)−c(2×8)surface by medium-energy ion scattering
5. Origin of surface states on Si(111)(7×7)
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1. A Suggestion of the Graphene/Ge(111) Structure Based on Ultra-High Vacuum Scanning Tunneling Microscopy Investigation;Ukrainian Journal of Physics;2016-01
2. New Features of the Ge(111) Surface with Co-existing с(2x8) and 2x2 Reconstructions Investigated by Scanning Tunneling Microscopy;Ukrainian Journal of Physics;2015-11
3. Density functional study of the Ge(111)c(2 × 8) surface using the modified Becke-Johnson exchange potential with LDA correlation and spin–orbit interactions;RSC Adv.;2014-10-02
4. Bismuth Growth on Ge(111): Evolution of Morphological Changes From Nanocrystals to Films;Ukrainian Journal of Physics;2014-08
5. Electronic and atomic structure of Co/Ge nanoislands on the Ge(111) surface;Physical Review B;2013-11-27
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