Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy-Reference-Cited by-同舟云学术

Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy

Published:1989-01-15 Issue:3 Volume:39 Page:1633-1647
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Becker R. S.,Swartzentruber B. S.,Vickers J. S.,Klitsner T.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.1633/fulltext

Reference55 articles.

1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy

2. Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces

3. Tunneling images of the 5×5 surface reconstruction on Ge-Si(111)

4. Study of Electronic Structures of Ge(111)7 ×7-Sn and Ge(111) “2 ×8” Surfaces by Angle-Resolved UPS

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