Structure determination of theGe(111)−c(2×8)surface by medium-energy ion scattering
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.1585/fulltext
Reference30 articles.
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1. First-principles study of Schottky barrier behavior at Fe3Si/Ge(111) interfaces;Japanese Journal of Applied Physics;2014-02-28
2. Scanning tunneling microscopy study of the Er/Ge(111) c(2×8) interface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-11
3. Electronic Structure of Semiconductor Surfaces;Electronic Structure;2000
4. Time-resolved reflection high-energy electron diffraction study of theGe(111)−c(2×8)–(1×1)phase transition;Physical Review B;1999-06-15
5. Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds;Chemical Reviews;1996-01-01
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