New Features of the Ge(111) Surface with Co-existing с(2x8) and 2x2 Reconstructions Investigated by Scanning Tunneling Microscopy
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
General Physics and Astronomy
Reference23 articles.
1. Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds
2. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
3. Dimer-chain model for the 7×7 and the 2×8 reconstructed surfaces of reconstructed surfaces of Si(111) and Ge(111)
4. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
5. Charge transfer and asymmetry on Ge(111)-c(2×8) studied by scanning tunneling microscopy
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1. Vacancy diffusion mediated dynamics of domain boundaries on Ge(111)- c(2×8);Physical Review B;2024-07-03
2. Scanning probe lithography on Ge(111)-c(2×8) surface;Semiconductor Physics, Quantum Electronics and Optoelectronics;2022-12-22
3. Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction;Journal of Vacuum Science & Technology B;2022-09
4. A Suggestion of the Graphene/Ge(111) Structure Based on Ultra-High Vacuum Scanning Tunneling Microscopy Investigation;Ukrainian Journal of Physics;2016-01
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