Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications-Reference-Cited by-同舟云学术

Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Published:2021-06-07 Issue:6 Volume:15 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Wu Y.C.^ORCID,Garello K.^ORCID,Kim W.,Gupta M.,Perumkunnil M.,Kateel V.^ORCID,Couet S.,Carpenter R.^ORCID,Rao S.^ORCID,Van Beek S.,Vudya Sethu K.K.,Yasin F.,Crotti D.,Kar G.S.

Funder

IMEC’s Industrial Affiliation Program on MRAM devices

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.064015/fulltext

Reference24 articles.

1. Opportunities and challenges for spintronics in the microelectronics industry

2. Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

3. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

4. Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

5. Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

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