Self-Powered Broadband Photodetector Based on a Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>In</mml:mi><mml:mi>Se</mml:mi></mml:mrow></mml:math> <i>p</i> - <i>i</i> - <i>n</i> Homojunction-Reference-Cited by-同舟云学术

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Self-Powered Broadband Photodetector Based on a Monolayer InSe p - i - n Homojunction

Published:2023-01-12 Issue:1 Volume:19 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Li Lin,Yuan Peize,Liu Ting,Ma Zinan,Xia Congxin^ORCID,Li Xueping

Funder

National Natural Science Foundation of China

Henan Normal University

Program for Outstanding Youth of Henan Province

Henan Innovative Science and Technology Team

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.19.014039/fulltext

Reference68 articles.

1. 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

2. A gate-free monolayer WSe2 pn diode

3. Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

4. Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

5. Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

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2. Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current;Frontiers of Physics;2024-04-04

3. Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga₂O₃ Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application;The Journal of Physical Chemistry Letters;2024-04-01

4. High-performance self-driven ultraviolet-visible photodetector based on type-II WS2/ReSe2 van der Waals heterostructure;Journal of Alloys and Compounds;2024-03

5. Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor;Ferroelectrics;2024-02-20

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