Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor
Author:
Affiliation:
1. College of Electronic and Electric Engineering, Henan Normal University, Xinxiang, China
2. Henan Key Laboratory of Optoelectronic Sensing integrated application, Xinxiang, China
3. School of Physics, Henan Normal University, Xinxiang, China
Funder
Key science research project of higher education institutions in Henan Province
Ph. D. Research Project of Henan Normal University
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/00150193.2023.2300613
Reference41 articles.
1. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications
2. Low-power-consumption organic field-effect transistors
3. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
4. Negative Differential Resistance in Negative Capacitance FETs
5. Negative Differential Resistance Circuit Design and Memory Applications
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