A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-023-3763-3.pdf
Reference27 articles.
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3. Wang Y, Bai X, Chu J. Record-low subthreshold-swing negative-capacitance 2D field-effect transistors. Adv Mater, 2020, 32: 2005353
4. Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479: 329–337
5. Sarkar D, Xie X, Liu W. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature, 2015, 526: 91–95
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