A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications-Reference-Cited by-同舟云学术

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Published:2023-05-18 Issue:6 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Chen Liang,Wang Huimin,Huang Qianqian,Huang Ru

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-023-3763-3.pdf

Reference27 articles.

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2. Li X, Yuan P, Li L. Sub-5-nm monolayer GaSe MOSFET with ultralow subthreshold swing and high on-state current: dielectric layer effects. Phys Rev Appl, 2022, 18: 044012

3. Wang Y, Bai X, Chu J. Record-low subthreshold-swing negative-capacitance 2D field-effect transistors. Adv Mater, 2020, 32: 2005353

4. Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479: 329–337

5. Sarkar D, Xie X, Liu W. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature, 2015, 526: 91–95

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