Tunable Negative Differential Resistance Behavior in the Nitrogen-Doped Zigzag Gese Nanoribbon Based Single-Gate Field Effect Transistor

Author:

Guo Caixia,jiao wenlong,Wang Tianxing

Publisher

Elsevier BV

Reference39 articles.

1. A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications;L Chen;Sci. China Inf. Sci,2023

2. Low-power-consumption organic field-effect transistors;Y Duan;J. Phys. Mater,2020

3. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors;E Ko;Nano Convergence,2018

4. Negative Differential Resistance in Negative Capacitance FETs;J Zhou;IEEE Electron Device Lett,2018

5. Negative Differential Resistance Circuit Design and Memory Applications;S.-L Chen;IEEE Trans. Electron Devices,2009

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