Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors-Reference-Cited by-同舟云学术

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Published:2020-10-12 Issue:46 Volume:32 Page:2005353
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wang Yang¹,Bai Xiaoyuan¹,Chu Junwei¹,Wang Hongbo¹,Rao Gaofeng¹,Pan Xinqiang¹,Du Xinchuan¹,Hu Kai¹,Wang Xuepeng¹,Gong Chuanhui¹,Yin Chujun²³,Yang Chao¹,Yan Chaoyi¹,Wu Chunyang¹,Shuai Yao¹,Wang Xianfu¹,Liao Min⁴^ORCID,Xiong Jie¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 P. R. China

2. Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 P. R. China

3. University of Chinese Academy of Sciences Beijing 100049 P. R. China

4. Hunan Provincial Key Laboratory of Thin Film Materials and Devices School of Materials Science and Engineering Xiangtan University Xiangtan 411105 P. R. China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Fundamental Research Funds for the Central Universities

Department of Science and Technology of Sichuan Province

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202005353

Reference36 articles.