PZT-Enabled MoS<sub>2</sub> Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing-Reference-Cited by-同舟云学术

PZT-Enabled MoS₂ Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing

Published:2023-11-06 Issue:22 Volume:23 Page:10196-10204
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Jing¹²^ORCID,Zhu Ye-Qing³,Zhao Xue-Chun³,Wang Zheng-Hua¹,Zhang Kai¹,Zhang Zheng¹,Sun Ming-Yuan¹,Wang Shuai¹,Zhang Yu¹⁴^ORCID,Han Lin¹⁵⁴⁶^ORCID,Wu Xiaoming³,Ren Tian-Ling³^ORCID

Affiliation:

1. Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China

2. BNRist, Tsinghua University, Beijing 100084, China

3. School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

4. Shenzhen Research Institute of Shandong University, Shenzhen 518057, China

5. State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China

6. Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan 250100, P. R. China

Funder

National Key Research and Development Program of China

Major Scientific and Technological Innovation Project of Shandong Province

Shandong University

Guoqiang Institute, Tsinghua University

National Natural Science Foundation of China

Key Fundamental Research Program of Shenzhen

Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong

National Research Centre for Beijing Information Science and Technology