Interface enhanced photogalvanic effects in the MoSi2N4 monolayer for spintronics
Author:
Affiliation:
1. Shanghai Normal University
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.074002/fulltext
Reference44 articles.
1. Self-Powered Broadband Photodetector Based on a Monolayer InSe p - i - n Homojunction
2. Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries
3. Neuromorphic Gustatory System with Salt-Taste Perception, Information Processing, and Excessive-Intake Warning Capabilities
4. Tuning of circular photogalvanic effect of surface states in the topological insulator Sb2Te3 via structural deformation
5. Giant bulk photovoltaic effect driven by the wall-to-wall charge shift in WS2 nanotubes
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1. Interface enhanced photogalvanic effects in the MoSi2N4 monolayer for spintronics;Physical Review Materials;2024-07-01
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