Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors-Reference-Cited by-同舟云学术

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Published:2018-12 Issue:1 Volume:9 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Wang Gang,Zhang Miao,Chen Da,Guo Qinglei,Feng Xuefei,Niu Tianchao,Liu Xiaosong,Li Ang,Lai Jiawei,Sun Dong^ORCID,Liao Zhimin^ORCID,Wang Yongqiang,Chu Paul K.^ORCID,Ding Guqiao,Xie Xiaoming,Di Zengfeng,Wang Xi

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/s41467-018-07555-6.pdf

Reference65 articles.

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3. Ferrari, A. C. et al. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 7, 4598–4810 (2015).

4. Gabor, N. M. et al. Hot carrier-assisted intrinsic photoresponse in graphene. Science 334, 648–652 (2011).

5. Liu, N. et al. Large-area, transparent, and flexible infrared photodetector fabricated using p-n junctions formed by N-doping chemical vapor deposition grown graphene. Nano. Lett. 14, 3702–3708 (2014).

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