Improved Vertical Carrier Transport for Green III-Nitride LEDs Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> Alloy Quantum Barriers-Reference-Cited by-同舟云学术

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga)N Alloy Quantum Barriers

Published:2022-05-31 Issue:5 Volume:17 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Lynsky Cheyenne^ORCID,Lheureux Guillaume,Bonef Bastien,Qwah Kai Shek,White Ryan C.,DenBaars Steven P.,Nakamura Shuji^ORCID,Wu Yuh-Renn,Weisbuch Claude,Speck James S.

Funder

U.S. Department of Energy

National Science Foundation

Simons Foundation

Sandia National Laboratory

Solid State Lighting and Energy Electronic Center

Ministry of Science and Technology

MOST

Agence Nationale de la Recherche

UCSB

international collaborative project TECCLON

Taiwanese MOST

NSF MRSEC Program of the NSF

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.17.054048/fulltext

Reference33 articles.

1. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

2. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

3. Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

4. Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane ( In , Ga ) N Quantum Wells

5. Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder

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