High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Author:

Ewing Jacob J.ORCID,Lynsky Cheyenne,Wong Matthew S.,Wu Feng,Chow Yi ChaoORCID,Shapturenka Pavel1ORCID,Iza Michael,Nakamura Shuji,Denbaars Steven P.1,Speck James S.

Affiliation:

1. University of California

Abstract

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm2. LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Funder

Office of Energy Efficiency and Renewable Energy

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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