Radiative Recombination inn-Type InP
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.157.672/fulltext
Reference11 articles.
1. PHOTOINDUCED RECOMBINATION RADIATION IN InP DIODES
2. Exciton Absorption and Emission in InP
3. Frequency Shift with Temperature as Evidence for Donor-Acceptor Pair Recombination in Relatively Puren-Type GaAs
4. LASER‐EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATEDP+GaAs AND THE BAND‐FILLING MODEL
5. Optical Properties ofn-Type InP
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1. Minority-carrier recombination inp−InPsingle crystals;Physical Review B;2003-09-30
2. Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24);Journal of Applied Physics;1993-08
3. Carrier lifetimes in MBE and MOCVD InGaAs quantum wells;Semiconductor Science and Technology;1993-02-01
4. OPTICAL PROPERTIES OF PLASTICALLY DEFORMED AND ELECTRON-IRRADIATED INDIUM PHOSPHIDE;Defect Control in Semiconductors;1990
5. Photoluminescence study of carrier collection and recombination in thin GaInAs/InP single quantum wells;Journal of Applied Physics;1989-12
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