LASER‐EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATEDP+GaAs AND THE BAND‐FILLING MODEL
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754112
Reference6 articles.
1. Tunneling-Assisted Photon Emission in Gallium ArsenidepnJunctions
2. BAND‐FILLING MODEL FOR GaAs INJECTION LUMINESCENCE
3. Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent Junctions
4. RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTION
5. ABSORPTION EDGE MEASUREMENTS IN COMPENSATED GaAs
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1. Photoluminescence of thermally treated n+ Si-doped and semi-insulating Cr-doped GaAs substrates;Journal of Luminescence;1981-01
2. Photoluminescence of Mn doped epitaxial GaAs;Solid State Communications;1978-03
3. Excitation‐dependent emission in Mg‐, Be‐, Cd‐, and Zn‐implanted GaAs;Journal of Applied Physics;1977-12
4. Hot electron and hot phonon contributions to radiative emission spectra in CdS at high excitation intensities;Solid State Communications;1975-03
5. Investigation of Injection Lasers;Quantum Electronics in Lasers and Masers;1972
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