Photoluminescence of thermally treated n+ Si-doped and semi-insulating Cr-doped GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
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1. Localized system with a mobility edge in epitaxial compensated AlxGa1−xAs;Journal of Applied Physics;1996-01
2. Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium;Bulletin of Materials Science;1994-11
3. Study of the broad luminescence bands in Ge‐implanted GaAs centered at 1.44–1.46 eV;Journal of Applied Physics;1991-10-15
4. Compensation phenomena in GaAs implanted with 1 MeV silicon ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
5. Identifications of photoluminescence and deep level transient spectra for Te-doped Al x Ga 1- x As;Chinese Physics Letters;1990-09
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