Carrier lifetimes in MBE and MOCVD InGaAs quantum wells-Reference-Cited by-同舟云学术

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Carrier lifetimes in MBE and MOCVD InGaAs quantum wells

Published:1993-02-01 Issue:2 Volume:8 Page:307-309
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ehrlich J E,Neilson D T,Walker A C,Kennedy G T,Grant R S,Sibbett W,Hopkinson M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=2/a=025/pdf

Reference15 articles.

1. Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures

2. Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells

3. Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells

4. Nonlinear optical absorption in bulk GaInAs/InP at room temperature

5. Radiative Recombination inn-Type InP

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