Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography-Reference-Cited by-同舟云学术

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Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography

Published:2019-02-28 Issue:2 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Kim Jaemyung,Seo Okkyun,Song Chulho,Hiroi Satoshi,Chen Yanna,Irokawa Yoshihiro,Nabatame Toshihide,Koide Yasuo,Sakata Osami

Funder

Ministry of Education, Culture, Sports, Science and Technology

SPring-8

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.024072/fulltext

Reference28 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

4. Growth and characterization of freestanding GaN substrates

5. Excellent crystallinity of truly bulk ammonothermal GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer;Materials Science in Semiconductor Processing;2024-03

2. Origins and characterization techniques of stress in SiC crystals: A review;Progress in Crystal Growth and Characterization of Materials;2024-02

3. Visualizing local bending of lattice planes by extending two-azimuth synchrotron X-ray diffraction datasets to asymmetric reflection;Science and Technology of Advanced Materials: Methods;2023-05-12

4. Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography;Journal of Crystal Growth;2022-04

5. Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography;RSC Advances;2020

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