Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography-Reference-Cited by-同舟云学术

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Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

Published:2022-04 Issue: Volume:583 Page:126559
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Yafei,Chen Zeyu,Hu Shanshan,Peng Hongyu,Cheng Qianyu,Raghothamachar Balaji,Dudley Michael

Funder

Argonne National Laboratory

US Department of Energy

Office of Science

Advanced Research Projects Agency - Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. Bulk ammonothermal GaN

3. Bulk GaN single crystals: growth conditions by flux method

4. Growth of bulk GaN single crystals by flux method

5. X-ray topography characterization of gallium nitride substrates for power device development

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1. Characterization of Growth Sectors in Gallium Nitride Substrate Wafers;Solid State Phenomena;2024-08-27

2. Synchrotron radiation x-ray topography applied to nitride semiconductor crystals;Journal of Applied Physics;2024-05-08

3. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices;Crystals;2023-06-23

4. Visualizing local bending of lattice planes by extending two-azimuth synchrotron X-ray diffraction datasets to asymmetric reflection;Science and Technology of Advanced Materials: Methods;2023-05-12

5. Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution;Journal of Applied Crystallography;2022-05-25

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