Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography-Reference-Cited by-同舟云学术

Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

Published:2020 Issue:4 Volume:10 Page:1878-1882
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Jaemyung¹²³⁴⁵,Seo Okkyun¹²³⁴⁵,Hiroi Satoshi⁶⁷⁸⁹⁵,Irokawa Yoshihiro¹²³⁴⁵,Nabatame Toshihide¹²³⁴⁵,Koide Yasuo¹²³⁴⁵,Sakata Osami¹²³⁴⁵^ORCID

Affiliation:

1. Center for GaN Characterization and Analysis

2. Research Network and Facility Services Division

3. National Institute for Materials Science (NIMS)

4. Tsukuba

5. Japan

6. Synchrotron X-ray Group

7. Research Center for Advanced Measurement and Characterization

8. NIMS

9. Sayo

Abstract

We investigated the surface morphology changes in a 2 inch-diameter, c-plane, free-standing GaN wafer using X-ray diffraction topography in a grazing-incidence geometry.

Funder

National Research Foundation of Korea

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/C9RA08882B

Reference29 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. An insulator-lined silicon substrate-via technology with high aspect ratio

4. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

5. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

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