Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator andSrTiO3-Reference-Cited by-同舟云学术

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator andSrTiO3

Published:2016-08-25 Issue:9 Volume:117 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Trier Felix,Prawiroatmodjo Guenevere E. D. K.,Zhong Zhicheng,Christensen Dennis Valbjørn,von Soosten Merlin,Bhowmik Arghya,Lastra Juan Maria García,Chen Yunzhong,Jespersen Thomas Sand,Pryds Nini

Funder

Styrelsen for Forskning og Innovation

Lundbeckfonden

Danmarks Grundforskningsfond

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.117.096804/fulltext

Reference41 articles.

1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

2. Two-Dimensional Magnetotransport in the Extreme Quantum Limit

3. Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly DopedBi2Se3: Evidence for Layered Transport of Bulk Carriers

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. Quantum Hall Effect in Polar Oxide Heterostructures

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