Quantum Hall Effect in Polar Oxide Heterostructures-Reference-Cited by-同舟云学术

Quantum Hall Effect in Polar Oxide Heterostructures

Published:2007-03-09 Issue:5817 Volume:315 Page:1388-1391
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Tsukazaki A.¹²³⁴⁵,Ohtomo A.¹²³⁴⁵,Kita T.¹²³⁴⁵,Ohno Y.¹²³⁴⁵,Ohno H.¹²³⁴⁵,Kawasaki M.¹²³⁴⁵

Affiliation:

1. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

2. PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan.

3. ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency, Sendai 980-0023, Japan.

4. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.

5. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan.

Abstract

We observed Shubnikov–de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/Mg x Zn 1– x O heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 10 12 to 3.7 × 10 12 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference27 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

3. High-mobility electronic transport in ZnO thin films

4. Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

5. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

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