Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.2749/fulltext
Reference14 articles.
1. Tunneling spectroscopy across GaAs/AlxGa1−xAs interfaces at nanometer resolution
2. Direct mapping of electronic structure acrossAl0.3Ga0.7As/GaAs heterojunctions: Band offsets, asymmetrical transition widths, and multiple-valley band structures
3. Electronic band structure of far-infrared Ga1-xInxSb/InAs superlattices
4. Reflection high-energy electron diffraction studies of the growth of InAs/Ga1−xInxSb strained-layer superlattices
5. X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface
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