Tunneling spectroscopy across GaAs/AlxGa1−xAs interfaces at nanometer resolution
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6946/fulltext
Reference12 articles.
1. Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAs
2. Surface Electronic Structure of Si (111)-(7×7) Resolved in Real Space
3. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
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