Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures-Reference-Cited by-同舟云学术

Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Published:2022 Issue:47 Volume:10 Page:17994-18003
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hudait Mantu K.¹^ORCID,Johnston Steven W.²,Meeker Michael³,Khodaparast Giti A.³^ORCID

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia, 24061, USA

2. National Renewable Energy Laboratory, Golden, Colorado, 80401, USA

3. Department of Physics, Virginia Tech, Blacksburg, Virginia, 24061, USA

Abstract

Carrier lifetimes of InAs/GaSb heterostructures probed by μ-PCD at 1800 nm wavelength.

Funder

Air Force Office of Scientific Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03443C

Reference68 articles.

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5. M. O.Manasreh , ed., Antimonide-Related Strain-layer Heterostructures , Gordon and Breach Science Publishers ; The Netherlands , 1st edn, 1997

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