Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence-Reference-Cited by-同舟云学术

Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence

Published:2020-08-24 Issue:8 Volume:117 Page:081104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xiren¹,Xu Zhicheng²,Zhou Yi²^ORCID,Zhu Liangqing¹³,Chen Jianxin²^ORCID,Shao Jun¹^ORCID

Affiliation:

1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China

2. Key Laboratory of Infrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China

3. Key Laboratory of Polar Materials and Devices, East China Normal University, 200062 Shanghai, China

Funder

Science and Technology Commission of Shanghai Municipality

Youth Innovation Promotion Association

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015540

Reference44 articles.

1. InAs/GaSb type-II superlattice infrared detectors: Future prospect

2. Advances in mid-infrared detection and imaging: a key issues review

3. High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

4. Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

5. Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection

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