Monovacancy and Interstitial Migration in Ion-Implanted Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.265502/fulltext
Reference32 articles.
1. Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance
2. Complex Dynamical Phenomena in Heavily Arsenic Doped Silicon
3. Intrinsic defects in silicon
4. Boron diffusion in silicon: the anomalies and control by point defect engineering
5. Systematic Study Related to the Role of Initial Impurities and Irradiation Rates in the Formation and Evolution of Complex Defects in Silicon for Detectors in HEP Experiments*
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