Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance
Author:
Affiliation:
1. Consiglio Nazionale delle Ricerche (CNR)
2. CNR-IMM
3. INFM, Università di Catania
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.153-155.137.pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Damage Formation and Evolution in Ion-Implanted Crystalline Si;Topics in Applied Physics;2009
2. Monovacancy and Interstitial Migration in Ion-Implanted Silicon;Physical Review Letters;2007-06-29
3. Gettering of copper in silicon at half of the projected ion range induced by helium implantation;Journal of Applied Physics;2002
4. In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions;Physica B: Condensed Matter;1999-12
5. Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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