Gettering of copper in silicon at half of the projected ion range induced by helium implantation-Reference-Cited by-同舟云学术

Gettering of copper in silicon at half of the projected ion range induced by helium implantation

Published:2002 Issue:1 Volume:91 Page:69
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Peeva A.,Fichtner P. F. P.,da Silva D. L.,Behar M.,Koegler R.,Skorupa W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference32 articles.

1. T. E. Seidel, inMaterials Issues in Silicon Integrated Circuit Processing, edited by M. Wittmer, J. Stimmell, and M. Strathman (Mater. Research Society Pittsburgh, 1986), p. 3.

2. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations

3. Iron gettering mechanisms in silicon

4. MeV-ion-induced damage in Si and its annealing

5. Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

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