Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant{111}Facets
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.176102/fulltext
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1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Self-assembled Ge/Si dots for faster field-effect transistors
4. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
5. Continuous formation and faceting of SiGe islands on Si(100)
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