Critical Shape and Size for Dislocation Nucleation inSi1−xGexIslands on Si(001)-Reference-Cited by-同舟云学术

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Critical Shape and Size for Dislocation Nucleation inSi1−xGexIslands on Si(001)

Published:2007-12-07 Issue:23 Volume:99 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Marzegalli A.,Zinovyev V. A.,Montalenti F.,Rastelli A.,Stoffel M.,Merdzhanova T.,Schmidt O. G.,Miglio Leo

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.99.235505/fulltext

Reference18 articles.

1. Structural properties of self-organized semiconductor nanostructures

2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

3. Extended shape evolution of low mismatch Si1−xGex alloy islands on Si(100)

4. Local equilibrium and global relaxation of strainedSiGe∕Si(001)layers

5. Nanometer-scale composition measurements of Ge/Si(100) islands

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