Defect Generation by Hydrogen at the Si-SiO2Interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.87.165506/fulltext
Reference32 articles.
1. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface
2. Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence
3. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
4. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field
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